Process for forming tapered trenches in a dielectric material

Details Process for forming tapered trenches in a dielectric material Process for forming tapered trenches in a dielectric material

2007-07-24

2007-07-24

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S713000, C438S706000

Reexamination Certificate

active

11018213

ABSTRACT:
A process for forming a tapered trench in a dielectric material includes the steps of forming a dielectric layer on a semiconductor wafer, and plasma etching the dielectric layer; during the plasma etch, the dielectric layer is chemically and physically etched simultaneously.

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