Process for forming sub-micrometer patterns using silylation of

Details Process for forming sub-micrometer patterns using silylation of Process for forming sub-micrometer patterns using silylation of

1987-03-17

1989-02-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG51, 148DIG111, 148DIG137, 156628, 1566591, 427 431, 437229, 437935, 437962, H01L 21265

Patent

active

048031810

ABSTRACT:
A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions.
First, a patterned resist profile with substantially vertical edges is formed on a substrate on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces highly oxygen etch resistant. In a subsequent anisotropic RIE process, the horizontal surfaces of the silylated profile and the unsilylated resist are removed, leaving the silylated vertical edges, that provide the desired free-standing sidewalls, essentially unaffected.

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Riseman, "Precision-Submicron-Dimensional Mask for X-ray Lithography," IBM TDB, vol. 27 No. 7B, Dec. 1984, pp.4115-4117.
Johnson Jr. et al., "Method for Making Submicron . . . Sidewall Image Transfer Techniques," IBM TDB, vol. 26, No. 9, Feb. 1984, pp. 4587-4589.

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