Process for forming stacked contacts and metal contacts on stati

Details Process for forming stacked contacts and metal contacts on stati Process for forming stacked contacts and metal contacts on stati

1995-04-27

1996-08-20

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 47, 437 60, 437 40, H01L 2170, H01L 2700

Patent

active

055478921

ABSTRACT:
A method for fabricating a novel plug structure for low resistance ohmic stacked contacts and at the same time forming metal contacts to devices on a SRAM cell was achieved. The method involved forming electrically conductive plugs in the stacked contact openings to form ohmic connections between a P+ doped polysilicon layer and a N+ doped polysilicon layer and thereby increasing the on current (I.sub.on) of the SRAM cell. The electrical conductive plugs are also simultaneously formed in metal contact openings to devices areas elsewhere on the substrate.

REFERENCES:
patent: 4980732 (1990-12-01), Okazawa
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5196233 (1993-03-01), Chan et al.
patent: 5286663 (1994-02-01), Manning

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