Process for forming sloped topography contact areas between poly

Details Process for forming sloped topography contact areas between poly Process for forming sloped topography contact areas between poly

1974-04-01

1976-02-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

29571, 29580, 156 8, 252 793, 357 65, H01L 750

Patent

active

039363317

ABSTRACT:
A structure which achieves a sloped topography where a layer of polycrystalline silicon contacts a single crystal silicon substrate and a process for fabricating the structure are disclosed. The structure comprises a sloped tip of a single crystal silicon material located at the end of the polycrystalline silicon layer and making contact with the single crystal silicon substrate. The process involves defining the polycrystalline silicon layer by applying an orientation-selective etch which etches unwanted polycrystalline silicon preferentially to single crystal silicon so that the sloped tip remains essentially intact to achieve said sloped topography contact area.

REFERENCES:
patent: 3675319 (1972-07-01), Smith
patent: 3761785 (1973-09-01), Pruniaux
patent: 3768150 (1973-10-01), Sloan et al.

Affiliated with

Also associated with

Rating

Process for forming sloped topography contact areas between poly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming sloped topography contact areas between poly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming sloped topography contact areas between poly will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2121299