Process for forming silicon oxide film

Details Process for forming silicon oxide film Process for forming silicon oxide film

1992-08-27

1994-05-24

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

427 58, 4272553, 4272556, 4272557, 427294, 427387, 427492, 427535, 427553, 427558, 427578, 427588, B05D 306

Patent

active

053147243

DESCRIPTION:

BRIEF SUMMARY
FIELD OF THE INVENTION

The present invention relates to a process for the formation of a silicon oxide film and particularly to a process for forming an interlayer insulation film of SiO.sub.2 or the like between layers of a multilayer interconnection of a semiconductor device.


STATE OF THE RELATED ART

In recent years, progress in the miniaturization and multilayer interconnection of semiconductor devices has led to an increase in the aspect ratio, with the result that uneven portions on the surface of a pattern have had a serious influence on the reliability of the device.
For this reason, the development of a process for the formation of a semiconductor device which enables planarization of an insulating film provided for protecting and insulating an element and wiring, has been desired in the art.
The SOG (spin-on-glass) process has been widely utilized as a technique for planarizing an interlayer insulation film provided between Al wirings layers. This technique, however, has many problems, and the development of a novel CVD process capable of providing a conformal or fluid form has been intensively studied in the art.
The SOG method is classified into the inorganic SOG and the organic SOG methods. In the inorganic SOG method, it is difficult to increase the thickness of the film due to the occurrence of a large film shrinkage, and multi-coating is necessary even for attaining a film thickness of about 300 nm. On the other hand, in the organic SOG method, although an increase in the film thickness is possible, organic groups remaining in the film give rise to rapid oxidation decomposition in an O.sub.2 plasma or in an O.sub.2 atmosphere at a high temperature. In general, an SOG film has a much higher hygroscopicity than other CVD oxide films and becomes an adsorption source of moisture when it is exposed to the air. Degassing due to said adsorption of moisture, generation of the formed water from the film due to undercuring, etc. are causative of a lowering in the reliability. For this reason, in order to prevent the SOG film from being exposed on the side wall of a through hole, the combined use of an etch back process is necessary in a process wherein use is made of SOG.


SUMMARY OF THE INVENTION

An object of the present invention is to provide a process for the formation of a planarized insulation film having a desired thickness and a high reliability.
According to the present invention, in order to attain the above-described object, there is provided a process for the formation of a silicon oxide film, comprising the steps of: exciting a gas, comprising an organosilane or organosiloxane gas and a gas containing H and OH, above a substrate in a reaction chamber to cause them to a react with each other in a gaseous phase or on the substrate, thereby depositing a thin film of an organic-group-containing silanol, silanol polymer, or siloxane-bonded polymer on the substrate; and removing the organic groups from the thin film to form a silicon oxide film.
According to a preferred embodiment, the removal of the organic groups is performed by a plasma treatment. In particular, the step of deposition and the step of plasma treatment are alternately repeated in an identical reaction chamber to form a silicon oxide film having a desired film thickness on a substrate.
It is preferred to conduct the excitation by means of pulsation. In this case, the excitation time is sufficiently short, such that the organosilane or organosiloxane gas or its reaction product can still contain organic groups when it reaches the substrate.
According to one preferred embodiment, the deposition is conducted through the use of planar-type plasma CVD system under conditions of a pressure of 5 to 15 Torr, a temperature of room temperature to 250.degree. C., a distance between electrodes of 6 to 25 mm, a gas flow rate of 100 to 18000 cm.sup.3 /min, a discharge power of 100 to 500 W, and a discharge "on" time satisfying a requirement represented by the formula ##EQU1## wherein D represents a discharge time in terms of % by assum

REFERENCES:
Zagata et al., "Dielectric Films Prepared by Low-Temperature Oxidation of Tetraethoxysilane," Chemical Abstracts, vol. 77, No. 12, Sep. 18, 1972, Abstract No. 81056n, p. 430 & Late PSR Zinat. Akad. Vestis, Fiz. Tch. Zinat. Ser., vol. 3, 1972, pp. 34-39.

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