Process for forming silicon dioxide film

Details Process for forming silicon dioxide film Process for forming silicon dioxide film

1997-09-29

1999-11-02

King, Roy V.

Coating processes

Heat decomposition of applied coating or base material

427553, 4273722, 427379, B05D 302

Patent

active

059766182

ABSTRACT:
A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

REFERENCES:
patent: 4116658 (1978-09-01), Sano
patent: 5358739 (1994-10-01), Baney et al.

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