Process for forming self-supporting semiconductor film

Details Process for forming self-supporting semiconductor film Process for forming self-supporting semiconductor film

1980-11-18

1983-01-25

Pavelko, Thomas P.

Plastic and nonmetallic article shaping or treating: processes

Gas or vapor deposition of article forming material onto...

264 60, 264 61, 264 62, 357 7, 427 69, 427 86, B29C 1300

Patent

active

043702880

ABSTRACT:
A process is provided for forming a self-supporting semiconductor film or ribbon. A TESS substrate is prepared from a substrate of refractory material having an expansion coefficient different from the expansion coefficient of the semiconductor material. A colloidal suspension of graphite is applied to the substrate to form a thin layer of loosely adherent graphite particles. Over this layer of graphite is deposited a layer of the semiconductor material, the deposition occurring at an elevated temperature. Upon cooling from the deposition temperature, the differential thermal expansion coefficience causes the shearing at the graphite layer and therefore provides for the easy removal of the semiconductor layer from the substrate.

REFERENCES:
patent: 3560364 (1971-02-01), Burkhardt
patent: 3900540 (1975-08-01), Robba et al.
patent: 4131659 (1978-12-01), Authier et al.
patent: 4159354 (1979-06-01), Milnes et al.
patent: 4160797 (1979-07-01), Goppinger et al.
patent: 4238436 (1980-12-01), Hill et al.
patent: 4250148 (1981-02-01), Cota et al.
"Self-Supporting Silicon Films for Terrestrial Applications by Energy Beam Plasma," Sarma et al. Proc. 13th IEEE Photo-Voltaic Specialists Conference, p. 466, 6/78.
"The Thermal Expansion Shear Separation (TESS) Technique for Producing Thin Self-Supporting Silicon Films for Low Cast Solar Cells," Sarma et al. IEEE Transactions on Electron Devices, vol. Ed.-27, No. 4, p. 651, 4/80.

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