Process for forming resist mask pattern

Details Process for forming resist mask pattern Process for forming resist mask pattern

1993-08-19

1995-09-05

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Masking of sidewall

437228, 216 38, 216 67, 216 47, C03C 1500

Patent

active

054475988

ABSTRACT:
A process for forming a resist mask pattern includes the steps of forming a resist layer of organic material in a multilevel resist process on a layer to be etched, and selectively etching a planarizing lower layer used in the resist layer by using an etching gas of oxygen under a plasma condition, in which a compound gas of at least one element selected from the group consisting of B, Si, Ti, Al, Mo, W and S is added to the etching gas. For example, the compound gas comprises BCl.sub.3, BH.sub.3, TiCl.sub.4, S.sub.2 Cl.sub.2, SiCl.sub.4 or the like. During the etching, a compound oxide, e.g., B.sub.2 O.sub.3, SiO.sub.2 or the like, is deposited on sidewalls of the lower layer to form a protective layer which prevents undercutting.

REFERENCES:
patent: 4361114 (1982-11-01), Gurev
patent: 4462882 (1984-07-01), Horwitz
patent: 4681653 (1987-07-01), Purdes et al.
patent: 4683838 (1987-08-01), Kimura et al.
patent: 4702795 (1987-10-01), Douglas
Wolf, Silicon Processing for the VLSI Era, vol. 1, pp. 423-424, Lattice Press, 1986.
Coburn, Plasma-Assisted Etching, Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-6.

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