Process for forming portions of a compound material inside a...

Details Process for forming portions of a compound material inside a... Process for forming portions of a compound material inside a...

2007-03-13

2007-03-13

Tugbang, A. Dexter (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S846000, C029S847000, C029S849000, C029S853000, C257S347000, C257S351000, C257SE21011, C257SE21588, C438S003000, C438S632000, C438S655000

Reexamination Certificate

active

10657514

ABSTRACT:
A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity furthermore has an internal wall with at least one region made of an initial material (for example, silicon). A metal is deposited close to the region of initial material. The circuit is then heated to form a portion of the compound material (for example, a silicide) in the region of initial material inside the cavity. The compound material is formed from elements of the initial material and from some of the metal deposited. The excess metal that has not formed some of the compound material is then removed from the cavity.

REFERENCES:
patent: 5120666 (1992-06-01), Gotou
patent: 5580802 (1996-12-01), Mayer et al.
patent: 5583362 (1996-12-01), Maegawa
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 6001660 (1999-12-01), Park et al.
patent: 2002/0003256 (2002-01-01), Maegawa
patent: 1 091 417 (2001-04-01), None
French Search Report; FR 0211989, dated Aug. 12, 2003.

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