Process for forming porous semiconductor region using electrolyt

Details Process for forming porous semiconductor region using electrolyt Process for forming porous semiconductor region using electrolyt

1976-11-04

1978-05-30

Goolkasian, John T.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 156628, 156648, 156662, 148187, 357 49, 204325, 204144, 2041415, 204140, 204147, 204148, B05D 512

Patent

active

040924459

ABSTRACT:
A process is disclosed for forming a porous region in a semiconductor device. In the process, a region of a relatively high impurity concentration is formed at a desired region of a semiconductor body of a lower impurity concentration. The semiconductor body is dipped into an electrolyte along with an electrode. The electrode is connected to the semiconductor body, whereby the high impurity concentration region is converted into a porous region.

REFERENCES:
patent: 3096259 (1963-07-01), Williams
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3689389 (1972-09-01), Waggener
patent: 3929529 (1975-12-01), Poponiak

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