Process for forming polycrystalline silicon film

Details Process for forming polycrystalline silicon film Process for forming polycrystalline silicon film

1993-06-14

1995-11-14

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437109, 437967, H01L 21469

Patent

active

054666414

ABSTRACT:
An object of this invention is to provide a process for forming a practical polycrystalline silicon film of large crystal grain diameters, which is for use in channels of thin film transistors. The polycrystalline silicon film is formed by surface-pretreating a surface of a silicon oxide film as the undermost layer with an etching liquid, e.g., rinsing the surface with an etching liquid, such as hydrogen fluoride, ammonium hydrogen peroxide or others, then depositing an amorphous silicon film, and annealing the amorphous silicon film.

REFERENCES:
patent: 4897360 (1990-01-01), Guckel et al.
patent: 5242855 (1993-09-01), Oguro

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