Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Patent
1996-12-26
1999-04-06
Geist, Gary
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
4302701, 430197, 438974, 438976, 438694, H01L 2118
Patent
active
058917497
ABSTRACT:
The present invention discloses a process for forming a photoresist pattern in a semiconductor device. In this process, first, a semiconductor substrate where an objective layer for the formation of a pattern is formed thereon, is provided. Afterwards, an alkaline aqueous solution is formed on the semiconductor substrate using either spray, coating, or deposition method. Thereafter, a priming step is performed. Lastly, a photoresist pattern is formed on the semiconductor substrate.
REFERENCES:
patent: 4882260 (1989-11-01), Kohara et al.
patent: 5332648 (1994-07-01), Kihara et al.
CA:122:44316 Abs of JP06275504, 1994.
Silicon Processing vol. 1 Lattice Press. Chapter 4 "Basics of thin film processing" pp. 109-110, 1986.
Geist Gary
Hyundai Electronics Industries Co,. Ltd.
Vollano Jean F.
LandOfFree
Process for forming photoresist pattern in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming photoresist pattern in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming photoresist pattern in semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1370940