Process for forming one or more substantially pure layers in sub

Details Process for forming one or more substantially pure layers in sub Process for forming one or more substantially pure layers in sub

1990-12-11

1992-06-23

Padgett, Marianne

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427123, 20419215, 2041923, B05D 306, B05D 512, C23C 1448

Patent

active

051241749

ABSTRACT:
A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.
Also disclosed is an article made by the process.

REFERENCES:
patent: 4262056 (1981-04-01), Hubler et al.
patent: 4465337 (1984-08-01), Baron et al.
patent: 4576697 (1986-03-01), Palmer
patent: 4700454 (1987-10-01), Baerg et al.
patent: 4704302 (1987-11-01), Bruel et al.
patent: 4749660 (1988-06-01), Short et al.
patent: 4751100 (1988-06-01), Ogawa
patent: 4759836 (1988-07-01), Hill et al.
patent: 4786608 (1988-11-01), Griffith
Buene et al, "Metastable Alloys of Be Prepared by Ion Implantation," Metallurgical Transactions A, vol. 15A, Oct. 1984, pp. 1787-1805.
Myers et al, "Phase Equilibria and Diffusion in the Be-Al-Fe System Using High Energy Beams," Metallurgical Transactions A, vol. 7A, Jun. 1976, pp. 795-802.

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