Process for forming N-channel through amorphous silicon (.alpha.

Details Process for forming N-channel through amorphous silicon (.alpha. Process for forming N-channel through amorphous silicon (.alpha.

1998-07-02

2000-08-29

Nelms, David

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

438582, H01L 2128

Patent

active

061108103

ABSTRACT:
A method of forming channel for metal oxidation semiconductor in the integrated circuits. The manufacturing process is as following: a layer of amorphous silicon is deposited after forming the gate oxide, and ion implantation for forming channel is performed, then a doped polysilicon layer and a silicide layer are deposited orderly, finally the whole structure is defined to form a gate electrode. The key point of the current invention is the addition of amorphous silicon. This amorphous silicon can prevent the direct bombardment of implanted ions to the gate oxide, it can also avoid the diffusion of polysilicon dopant into the gate oxide, therefore, the electrical properties of transistor will be made stable. In addition, the native oxide spontaneously produced between amorphous silicon and polysilicon along with process is very even and plain, it is profitable to planarization when subsequently depositing other layers.

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patent: 5698901 (1997-12-01), Endo
patent: 5712181 (1998-01-01), Byun et al.
patent: 5918129 (1999-06-01), Fulford, Jr. et al.
patent: 5980763 (1999-11-01), Young

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