Process for forming MOS transistor with buried oxide regions for

Details Process for forming MOS transistor with buried oxide regions for Process for forming MOS transistor with buried oxide regions for

1985-11-04

1987-10-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 237, 357 238, 437 41, 437235, H01L 21265, H01L 2116, H01L 2128, H01L 21316

Patent

active

047004541

ABSTRACT:
MOS process for forming field-effect devices in self-alignment with a buried oxide region. Oxygen is implanted in alignment with masking members after gates have been defined from the masking members. The masking members block the oxygen implantation and thus the channel regions of subsequently formed transistors are self-aligned with openings in the buried oxide layer.

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patent: 4523213 (1985-06-01), Konaka et al.
Electronics Letters, pp. 593-594, Aug. 78, vol. 14, No. 18, K. Izumi et al., "CMOS Devices Fabricated on Buried SiO.sub.2 Layers Formed by Oxygen Implantation into Silicon".
VLSI Fabrication Principles, by S. K. Ghandhi, John Wiley & Sons, pp. 352, 359-361, 437.
Japanese J. of Applied Physics, vol. 21, No. 5, May 1982, pp. 744-751, Satoshi Maeyama et al.
Japanese J. of Applied Physics, vol. 20, No. 12, Dec. 1981, pp. L909-L912, Yukio Irita et al.

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