Process for forming monocrystalline silicon carbide on silicon s

Details Process for forming monocrystalline silicon carbide on silicon s Process for forming monocrystalline silicon carbide on silicon s

1976-06-30

1977-06-07

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577, 29578, 29580, 148174, 156612, 156648, 156654, 204 15, 204 32S, 2041293, 20412965, 357 40, 357 49, 357 50, 357 55, 357 58, 357 59, 357 61, 423345, 427 87, 427 93, 427249, H01L 2176, H01L 2120, H01L 2704

Patent

active

040281493

ABSTRACT:
A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050.degree. C to 1250.degree. C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.

REFERENCES:
patent: 3386866 (1968-06-01), Ebert et al.
patent: 3389022 (1968-06-01), Kravitz
patent: 3397448 (1968-08-01), Tucker
patent: 3400309 (1968-09-01), Doo
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3690969 (1972-09-01), Hays et al.
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3929529 (1975-12-01), Poponiak
patent: 3954523 (1976-05-01), Magdo et al.
Schlack, M. "Method of Epitaxially Growing Silicon Carbide", I.B.M. Tech. Discl. Bull., vol. 8, No. 4, Sept. 1965, p. 667.

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