Process for forming microcrystalline silicon material and produc

Details Process for forming microcrystalline silicon material and produc Process for forming microcrystalline silicon material and produc

1983-09-29

1985-01-08

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 39, B32B 904

Patent

active

044927363

ABSTRACT:
A process for forming microcrystalline silicon material includes the steps of introducing a silicon-containing gas, hydrogen gas and a relatively inert gas into a work environment to form a preselected gas atmosphere, and establishing a glow discharge through the gas atmosphere. A microcrystalline thin film of silicon is formed on a substrate exposed to the discharge. In a preferred embodiment, the power level of the discharge is less than 0.08 watts per square centimeter and the film is deposited at a rate of no more than approximately two angstroms per second. Under these circumstances, the material deposited on the substrate is bombarded by ions of the relatively inert gas, causing the material to form a microcrystalline thin film.

REFERENCES:
Matsuda et al., "A Simplified Model for the Deposition Kinetics of GD a-Si:H Films", 9th Int. Conf. on Amorphous and Liquid Semiconductors, Jul. 2-8, 1981.

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