Process for forming metal plated regions and lines in MOS circui

Details Process for forming metal plated regions and lines in MOS circui Process for forming metal plated regions and lines in MOS circui

1981-02-03

1982-05-25

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29590, 148 15, 148187, H01L 2126

Patent

active

043309313

ABSTRACT:
A process for forming self-aligned, metal plated substrate regions and polysilicon members is described. Oxide lips or borders are formed along the sides of the polysilicon members beneath a masking member. An oxide damaging ion bombardment is used to damage the oxide on the substrate, however, the oxide lips remain protected because of the overlying masking member. A controlled etch is used to remove the damaged oxide leaving the polysilicon member separated from adjacent regions by the oxide lips. A tungsten deposition is used to form metal plating over the exposed substrate regions and over the polysilicon member, however, no metal is formed over the oxide lips.

REFERENCES:
patent: 2750541 (1956-06-01), Ohl
patent: 3615935 (1971-10-01), O'Keeffe et al.
patent: 3999281 (1976-12-01), Goronkin et al.
patent: 4013489 (1977-03-01), Oldham
patent: 4026733 (1977-05-01), Owen et al.
patent: 4033026 (1977-07-01), Pashley
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4198250 (1980-04-01), Jecmen
patent: 4272308 (1981-06-01), Varshney

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