Process for forming metal and metal silicide films

Details Process for forming metal and metal silicide films Process for forming metal and metal silicide films

1979-02-28

1980-08-19

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

204192SP, 204192F, C23C 1500

Patent

active

042182913

ABSTRACT:
In the past a film of a transition metal silicide or an aluminum silicon alloy has been deposited on a semiconductor substrate by vacuum evaporation and used as an electrode or wiring of a semiconductor device. According to the present invention, the film is produced by a sputtering method wherein the silicon component of the film is not supplied from the target but from a gaseous silicon compound contained in the sputtering atmosphere.

REFERENCES:
R. W. Wilson et al, "Application of High-Rate ExB or Magnetron Sputtering in the Metallization of Semiconductor Devices", J. Vac. Sci. Technol., vol. 13, pp. 157-164, (1976).
R. S. McLeod et al, "High-Rate Sputtering of Aluminum for Metallization of Integrated Circuits", J. Vac. Sci. Technol., vol. 14, pp. 263-265, (1977).

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