Process for forming magnetic memory structures

Details Process for forming magnetic memory structures Process for forming magnetic memory structures

2007-09-11

2007-09-11

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

11118828

ABSTRACT:
An exemplary method for making a memory structure comprises forming a first ferromagnetic layer, forming a spacer layer above the first ferromagnetic layer, forming a second ferromagnetic layer above the spacer layer by applying a first deposition process to form a thin layer of ferromagnetic material substantially covering the spacer layer, the first layer being formed at a first energy level, and applying a second deposition process to form the remainder of the second ferromagnetic layer above the thin layer of ferromagnetic material, the second ferromagnetic layer being formed at a second energy level, higher than the first energy level. This way, the spacer layer is protected by the thin layer during the second energy level deposition.

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