Process for forming lightly-doped-drain (LDD) without extra mask

Details Process for forming lightly-doped-drain (LDD) without extra mask Process for forming lightly-doped-drain (LDD) without extra mask

1987-06-30

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 27, 437 28, 437 29, 437 30, 437 41, 437 57, 437241, 437233, 156643, 357 233, H01L 21265

Patent

active

048430234

ABSTRACT:
A new lightly doped drain (LDD) process which does not required extra masking steps as compared to the conventional CMOS process is presented. By employing a new two layer side wall spacer technology, the LDD ion implantation for n-channel and p-channel devices can be carried out by sharing the n.sup.+ or p.sup.+ source and drain ion implantation mask. This approach provides maximum flexibility in designing optimum n.sup.- and p.sup.- channel LDD MOSFETs without using any additional mask steps other than the conventional CMOS mask levels. This process is also compatible with self-aligned silicide process.

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