Process for forming isolated silicon regions and field-effect de

Details Process for forming isolated silicon regions and field-effect de Process for forming isolated silicon regions and field-effect de

1985-02-11

1987-04-07

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 148 15, 148171, H01L 21477

Patent

active

046549587

ABSTRACT:
Improved processing for MOS and CMOS transistors formed in an epitaxial-like layer. Field oxide regions are formed followed by the deposition of a polycrystalline or amorphous silicon layer which contacts the substrate at "seed windows" formed between the field oxide regions. The silicon layer is recrystallized from the substrate through the seed windows. The transistors are fabricated within the recrystallized silicon layer.

REFERENCES:
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4381202 (1983-04-01), Mori et al.
patent: 4487639 (1984-12-01), Lam et al.
patent: 4497683 (1985-02-01), Celler et al.
patent: 4498226 (1985-02-01), Inoue
patent: 4566914 (1986-01-01), Hall

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