Process for forming insulating film used in thin film electrolum

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 77, 427 78, 427 99, B05D 306

Patent

active

048957348

ABSTRACT:
An insulating film formed by a plasma CVD method at the substrate temperature of 350.degree. to 550.degree. C.l is good in electric properties and heat resistance without causing whitening phenomenon is suitable for use in a thin-film electroluminescent device.

REFERENCES:
patent: 3600218 (1971-08-01), Pennebaker
patent: 4310614 (1982-01-01), Connell et al.
patent: 4330569 (1982-05-01), Gulett et al.
patent: 4436770 (1984-03-01), Nishizawa et al.
patent: 4532150 (1985-07-01), Endo et al.
patent: 4657775 (1987-04-01), Shioiri et al.
patent: 4686110 (1987-08-01), Endo et al.
patent: 4704299 (1987-11-01), Wielonski et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for forming insulating film used in thin film electrolum does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming insulating film used in thin film electrolum, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming insulating film used in thin film electrolum will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-644740

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.