Process for forming improved superconductor/semiconductor juncti

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29573, 29599, 148 15, 357 5, 357 15, 427 62, 427 84, H01L 3922, H01L 3924, H01L 3916

Patent

active

043958133

ABSTRACT:
The specification discloses a process for forming a superconductor/semiconductor junction structure having optimized low-temperature current transport properties by first providing a substrate of a chosen semiconductor material having an atomically clean surface. A layer of a first chosen superconducting material is deposited on or above the surface of the substrate to a predetermined thickness. Either before or after the formation of this layer of the first superconducting material, a region of a second chosen superconducting material is formed between the surface of the substrate and the layer of the first superconducting material to serve as an interfacial reaction barrier to prevent the reaction between the surface of the substrate and the first chosen superconducting material at the interface thereof which would otherwise result in the formation of an undesired non-superconducting material at the interface. By preventing this undesired interfacial reaction, an optimized low-temperature current transport path is maintained across the interface and certain device performance characteristics can be optimized. Josephson junction superconducting devices and super-Schottky devices may be formed by this disclosed process.

REFERENCES:
patent: 3761310 (1973-09-01), Preobrazhentsev et al.
patent: 3794516 (1974-02-01), Engeler et al.
patent: 3984261 (1976-10-01), Hawrylo
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4220959 (1980-09-01), Kroger
Roth, L. B. et al., "Super-Schottky and Josephson Effect Devices Using Niobium on Thin Silicon Membranes", in Amer. Inst. of Phys., vol. 44, pp. 384-388, 1978.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for forming improved superconductor/semiconductor juncti does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming improved superconductor/semiconductor juncti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming improved superconductor/semiconductor juncti will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-478134

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.