Process for forming heteroepitaxial structure

Details Process for forming heteroepitaxial structure Process for forming heteroepitaxial structure

1975-12-15

1976-10-12

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156612, 357 61, H01L 21205, H01L 3112, H01L 2184

Patent

active

039855902

ABSTRACT:
A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The preselected electroluminescent semiconductor material is then epitaxially deposited in single crystal form on the modified surface of the silicon wafer, a step which is not feasible without the modification of the silicon wafer surface. Preferably, the modification is achieved by epitaxially depositing a thin layer of semiconductor material whose lattice structure offers a substantially smaller disparity with the structure of the electroluminescent material than the existing disparity between the silicon wafer and the electroluminescent material.

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Burmeister et al., "Epitaxial Growth of GaAs.sub.1.INTEGRAL.x P.sub.x Germanium Substrates" Trans. Metallurgical Soc., Aime, vol. 245, Mar. 1969, pp. 565-569.

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