Process for forming heat resistant ohmic electrode

Details Process for forming heat resistant ohmic electrode Process for forming heat resistant ohmic electrode

1990-04-23

1992-02-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437202, 148DIG56, 148DIG58, H01L 2144

Patent

active

050913387

ABSTRACT:
This invention comprises a Pd layer formed on an n-type GaAs semiconductor crystals, and a Ge layer being formed on the Pd layer, characterized in that the thickness of the Pd layer is between 300 .ANG. and 1500 .ANG. and the thickness of the Ge layer is between 500 .ANG. and 1500 .ANG..
In addition, this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on an n-type GaAs semiconductor crystal, comprising a first layer forming step for forming a palladium (pd) layer on a compound semiconductor crystal; a second layer forming step for forming a germanium layer (Ge) on the Pd layer; and an annealing step for annealing the Pd layer and the Ge layer by a rapid thermal annealing treatment.
The Pd layer is formed between 300 .ANG. and 1500 .ANG. in the first layer forming step; the Ge layer is between 500 .ANG. and 1500 .ANG. in the second layer forming step; and the Pd layer and the Ge layer are heated in the annealing step for 3 seconds to 20 seconds at a temperature of 500.degree. C. to 650.degree. C. by a rapid thermal annealing treatment. As the rapid thermal annealing treatment, the flash annealing treatment is effective.

REFERENCES:
Marshall et al, "Nonalloyed Ohmic Contact to n-GaAs by Solid-Phase Epitaxy of Ge", 1 Aug. 87, J. Appl. Phys., vol. 62, pp. 942-947.
Pearton et al, Abstract #A87016601.
Wolf et al, Silicon Processing for the VLSI Era, 1986, pp. 57-58.

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