Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-11-04
1998-07-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257642, 257646, H01L 310312
Patent
active
057808740
ABSTRACT:
A resin or amorphous carbon layer is coated on a substrate and then fluorinated by exposing it in a F.sub.2 gas atmosphere. The thus fluorinated resin or amorphous carbon layer can be excellent in dielectric constant and thermal resistance. The resin may be photo-sensitive so that the resin can be patterned before the fluorination. Alternatively, the resin can be fluorinated before patterning.
REFERENCES:
patent: 4908198 (1990-03-01), Weinberg
patent: 5387495 (1995-02-01), Lee et al.
H.Y. Lu et al., J. vac. Sci. Technol. A. vol. 10, No. 3, 450 (1992).
R.J. Lagow et al. Polymer Letters Edition, vol. 12, pp. 177-184 (1984).
Crane Sara W.
Fujitsu Limited
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