Process for forming field isolation

Details Process for forming field isolation Process for forming field isolation

1994-05-09

1994-12-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 437974, 437968, 148DIG135, H01L 2176

Patent

active

053745850

ABSTRACT:
A field isolation region is formed by a thermal oxidation followed by a polishing step. In forming the field isolation region, an opening is formed within a nitride layer, but the substrate is not etched. The field isolation region is formed and extends above the opening in the nitride layer. After forming the field isolation region, the substrate is polished, such that the surfaces of the field isolation region and silicon nitride layer are co-planar. The process may be easily integrated into an existing process flow and still provides an integrated circuit having an acceptable field threshold voltage.

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