Process for forming field isolation

Details Process for forming field isolation Process for forming field isolation

1994-06-28

1995-07-11

Fourson, George

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

054321182

ABSTRACT:
Field isolation regions are formed using oxidation-resistant spacers or plugs that completely fill trenches within a semiconductor substrate prior to forming the field isolation regions. The spacers or plugs help to reduce encroachment of the field isolation regions under the spacers or plugs. The structure used as an oxidation mask for the field isolation process may include a silicon-containing member that is thicker than an overlying oxidation-resistant member. The thicker silicon-containing member may be capable of tolerating higher stress before defects in an underlying pad layer or substrate are formed.

REFERENCES:
patent: 4508757 (1985-04-01), Fabricius et al.
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5308784 (1994-05-01), Kim et al.
Ghezzo, et al.; "Laterally Sealed LOCOS Isolation;" J. Electrochem. Soc.: Solid-State Science and Technology; pp. 1475-1479 (1987).
Kuang Yi Chiu; "SWAMI: A Zero-Encroachment Local Oxidation Process;" Aug. '82 Hewlett-Packard Journal.; pp. 31-32 (1982).

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