Process for forming field dielectric regions in semiconductor st

Details Process for forming field dielectric regions in semiconductor st Process for forming field dielectric regions in semiconductor st

1979-01-15

1979-10-09

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 23, 357 59, 427 86, H01L 21265, H01L 21225, H01L 2122

Patent

active

041705009

ABSTRACT:
A process for forming the field dielectric regions in semiconductor structures without encroaching upon device areas includes the steps of forming an insulating layer on a surface of a semiconductor substrate, forming regions of selected material on the surface of said insulating layer, converting said regions of selected material to insulating material, and removing the insulating layer from the surface of the semiconductor substrate except where the insulating material overlies the insulating layer. Active and/or passive electronic devices may then be formed in the exposed regions of said semiconductor substrate using well known semiconductor processing technology. The combined insulating layer and insulating material will prevent field inversion from occuring in all of those regions of the semiconductor substrate on which the insulating layer and the insulating material are disposed.

REFERENCES:
patent: 3899373 (1975-08-01), Antipov
patent: 3912557 (1975-10-01), Hochberg
patent: 3966501 (1976-06-01), Nomura et al.
patent: 4030952 (1977-06-01), Luce et al.
patent: 4046606 (1977-09-01), Lambert
patent: 4074304 (1978-02-01), Shiba
patent: 4075045 (1978-02-01), Rideout
patent: 4110125 (1978-08-01), Beyer
patent: 4140548 (1979-02-01), Zimmer

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