Process for forming features on a semiconductor wafer using a ph

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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active

06162568&

ABSTRACT:
A phase shifting mask can be used to form features on a semiconductor wafer with exposure lights of two different wavelengths. The depth of the phase shifting layer is calculated and fabricated such that it shifts a first exposure light about 180.degree. and a second exposure light about 180.degree..

REFERENCES:
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patent: 5397664 (1995-03-01), Noelscher et al.
patent: 5457006 (1995-10-01), Hirokane et al.
patent: 5549995 (1996-08-01), Tanaka et al.
patent: 5670281 (1997-09-01), Dai

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