Semiconductor device manufacturing: process – Avalanche diode manufacture
Reexamination Certificate
2005-08-09
2005-08-09
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Avalanche diode manufacture
C438S454000, C438S514000, C438S533000, C438S543000, C438S669000, C438S672000
Reexamination Certificate
active
06927141
ABSTRACT:
A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
REFERENCES:
patent: 4009483 (1977-02-01), Clark
patent: 4220963 (1980-09-01), Rumennik
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4862229 (1989-08-01), Mundy et al.
patent: 4901120 (1990-02-01), Weaver et al.
patent: 4925812 (1990-05-01), Gould
patent: 5283202 (1994-02-01), Pike et al.
patent: 5466612 (1995-11-01), Fuse et al.
patent: 5523604 (1996-06-01), Merrill
patent: 5552625 (1996-09-01), Murakami et al.
patent: 5859465 (1999-01-01), Spring et al.
patent: 6197649 (2001-03-01), Francis et al.
patent: 6222248 (2001-04-01), Fragapane
patent: 6441455 (2002-08-01), Dutta
patent: 2002/0171093 (2002-11-01), Onishi et al.
patent: 001033756 (2000-09-01), None
patent: 200082825 (2000-03-01), None
patent: 02000114550 (2000-04-01), None
patent: 2002033326 (2000-07-01), None
Andoh Kohji
Chiola Davide
Fimiani Silvestro
Redda Fabrizio Ruo
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Thomas Toniae M.
Wilczewski Mary
LandOfFree
Process for forming fast recovery diode with a single large... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming fast recovery diode with a single large..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming fast recovery diode with a single large... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3453757