Process for forming electronic circuit

Details Process for forming electronic circuit Process for forming electronic circuit

1997-03-04

1998-06-02

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

4271261, 427282, 427333, 427337, 427384, 427402, H05H 100

Patent

active

057596387

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

This invention relates to a process for forming an electronic circuit, more specifically to a process for forming an electronic circuit by forming a thin layer on the surface of a base material by using a polyorganosilane, particularly a network skeleton polyorganosilane, oxidizing a partial portion thereof and then carrying out doping.


BACKGROUND ART

In order to form an electronic circuit, various methods have been carried out depending on the use thereof. They are methods in which conductor portions are formed by using a substance having conductivity or semiconductivity and the conductor portions are separated by an insulating substance. As a method for forming the conductor portions, there has conventionally been carried out a method of mechanically processing a metal, such as stretching, machining, pressing, cutting, etc. Also, there has generally been carried out a method in which a metal film or semiconductor film is formed and a part of the film is melted away by a chemical reaction to form a conductor portion. The latter chemical method has widely been used particularly in the fields of electronics and microelectronics where fine processing is required. The conductor portions formed by these methods are further processed by using an insulating substance to form an electronic circuit.
In all of these chemical processing methods, a conductor portion is formed by removing a conductor material partially. However, in these methods, not only a waste of the material is generated, but also there is a problem that processing steps are numerous. The fact that the processing steps are numerous means that possibilities of lowering pattern precision and contaminating the material by the processing are large. The latter problem has been more serious as an integration degree, required processing precision and circuit characteristics are increased in fine processing by the chemical method. Also, in this fine processing by the chemical method, a problem of disposing discharged matter discharged in the processing steps has been also serious.
Further, an actual electronic circuit comprises not only a conductive portion and an insulating portion but also a resistor, a condenser, etc. mounted thereon. It is preferred to remove the steps of mounting them, if possible.
Among organosilicon type polymers, a polyorganosilane or an analogue thereof is a polymer having a Si--Si bond skeletal structure comprising a .sigma. bond, its a electrons can be delocalized, and as a result, it has unique electronic characteristics such as (semi)conductivity, photoconductivity, luminous characteristics, etc. which are different from those of a carbon type polymer. Also, reactions of polysilanes have heretofore been studied, and particularly a photolysis reaction has been investigated in detail. It has been reported that cleavage of a Si--Si bond occurs by irradiating polyorganosilane with UV ray, and by carrying out this irradiation with UV ray in the air, photooxidation occurs to convert polyorganosilane into a polyorganosiloxane, etc. (for example: J. M. Ziegler et al., Proc. SPIE, Vol. 539, p. 166 (1985); H. Ban et al., J. Appl. Polym. Sci., Vol. 33, p.2787 (1987)).
Weidman has disclosed in Japanese Provisional Patent Publication No. 302439/1990 that by spin coating a polysilyne synthesized from an alkyl or aryl trichlorosilane and photooxidizing the polysilyne by irradiation with UV ray in the presence of oxygen, a portion having a low refractive index is generated and an optical device and an electronic device such as a passive waveguide are manufactured by using this.
Yokoyama et al. have disclosed in Chemistry Letters, 1989, p. 1,005 and Polymer Society of Japan, Polymer Preprints Japan, Vol. 41, p. 4,012 that a siloxane pattern is formed by photooxidation of a poly(diorganosilane) film and can be applied to image recording and xerography due to disappearance of a hole-transporting ability.
However, in either of the above disclosures, there has not been disclosed formation of an electronic circuit by utilizing

REFERENCES:
patent: 3663224 (1972-05-01), Hallman et al.
patent: 4921321 (1990-05-01), Weidman

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