Process for forming deposited film from a group II through group

Details Process for forming deposited film from a group II through group Process for forming deposited film from a group II through group

1990-04-10

1993-01-12

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427252, 427253, 4272552, 427585, 427595, 2041574, B05D 306, C23C 1600, C01B 0000

Patent

active

051789043

ABSTRACT:
A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.

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