Process for forming deposited film

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of coating supply or source outside of primary...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427568, 427578, 4272551, 4272552, B05D 306

Patent

active

052446980

ABSTRACT:
A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

REFERENCES:
patent: 3473978 (1969-10-01), Jackson et al.
patent: 3825439 (1974-07-01), Tick
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4077818 (1978-03-01), Chu
patent: 4084024 (1978-04-01), Schumacher
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4282267 (1981-08-01), Kuyel
patent: 4402762 (1983-09-01), John et al.
patent: 4410559 (1983-10-01), Hamakawa et al.
patent: 4419381 (1983-12-01), Yamazaki
patent: 4430185 (1984-02-01), Shimomoto et al.
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4439463 (1984-03-01), Miller
patent: 4448801 (1984-05-01), Fukuda
patent: 4450185 (1984-05-01), Shimizu et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4466992 (1984-08-01), Dreiling
patent: 4468413 (1984-08-01), Bachmann
patent: 4468443 (1984-08-01), Shimizu et al.
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4485125 (1984-11-01), Izu et al.
patent: 4504518 (1985-03-01), Ovshivsky et al.
patent: 4514437 (1985-04-01), Nath
patent: 4517223 (1985-05-01), Ovshinsky et al.
patent: 4521447 (1985-06-01), Ovshinsky et al.
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4526805 (1985-07-01), Yashizawa
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4543267 (1985-09-01), Yamazaki
patent: 4544423 (1985-10-01), Tsuge et al.
patent: 4546008 (1985-10-01), Saitoh et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4564533 (1986-01-01), Yamazaki
patent: 4564997 (1986-01-01), Matsuo et al.
patent: 4567127 (1986-01-01), Saitoh et al.
patent: 4569697 (1986-02-01), Tsu et al.
patent: 4582560 (1986-04-01), Sanjurjo
patent: 4615905 (1985-10-01), Ovshinsky
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4664937 (1987-05-01), Ovshinsky et al.
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4717586 (1988-01-01), Ishihara et al.
Brodsky, et al., 22 IBM Technical Disclosure Bulletin p. 3391 (Jan. 1980).
Janai, et al., 52J. Appl. Phys p. 3622 (May, 1981).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for forming deposited film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming deposited film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming deposited film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2025026

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.