Process for forming copper interconnect structure

Details Process for forming copper interconnect structure Process for forming copper interconnect structure

1993-09-13

1995-02-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, H01L 2144

Patent

active

053915178

ABSTRACT:
A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided. The metallization structure includes an interface layer (22) intermediate to a dielectric layer (12), and a copper interconnect (30). The interface layer (22) functions to adhere the copper interconnect (30) to a device substrate (10) and to prevent the diffusion of copper into underlying dielectric layers. The interconnect layer (22) is fabricated by depositing a first titanium layer (16) followed by the sequential deposition of a titanium nitride layer (18), and a second titanium layer (20). A copper layer (24) is deposited to overlie the second titanium layer (20) and an annealing step is carried out to form a copper-titanium intermetallic layer (26). The titanium nitride layer (18) functions as a diffusion barrier preventing the diffusion of copper into the underlying dielectric layer (12), and the copper titanium intermetallic layer (26) provides an adhesive material, which adheres the copper layer (24) to the device substrate ( 10). Following the formation of the intermetallic layer (26), the device surface is planarized to form a planar surface (28), and to form an inlaid copper interconnect (30).

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J. O. Olowalafe et al. "Interdiffusion in Cu/reactive ion-sputtered TiN . . . " J. Appl. Phys. 72(9) Nov. 1992 pp. 4099-4103.
Alain E. Kaloyeros, et al. "Chem. Vap. Deposition of Copper for Multilevel Metallization" MRS Bull. Jun. 1993 pp. 22-29.
Yoshimoto, et al. "Films of the Intermetallic Compound CuTi.sub.2 and their Applications" Elec. and Comm. in Japan II vol. 76, No. 2 (Feb. 1993) pp. 93-100 abstract.

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