Process for forming contacts

Details Process for forming contacts Process for forming contacts

1992-08-27

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437186, 437187, 437238, H01L 2144

Patent

active

052739368

ABSTRACT:
A process for forming a contact which comprises (i) forming on a semiconductor substrate a LOCOS oxide film and a conductive pattern thereon, respectively, (ii) forming a first dielectric film and a second dielectric film on a semiconductor substrate including the LOCOS oxide film and the conductive pattern, respectively, and applying a heat treatment to the substrate, (iii) depositing a SiO film while the second dielectric film in a slant or tapered form formed over the edge portion of the conductive pattern is etched, wherein the deposition and etching is conducted by using Bias ECR method, thereby providing uniform thickness of each of the first and second dielectric films and the SiO film at a predetermined contact forming part, and (iv) forming a contact at the predetermined contact forming part.

REFERENCES:
patent: 4641420 (1987-02-01), Lee
patent: 4732761 (1988-03-01), Machida et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4956312 (1990-09-01), Van Laarhoven
patent: 5001077 (1991-03-01), Sakai
patent: 5124014 (1992-06-01), Foo et al.

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