Process for forming apertures in silicon bodies

Details Process for forming apertures in silicon bodies Process for forming apertures in silicon bodies

1975-04-14

1976-06-08

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412965, C25F 300

Patent

active

039620522

ABSTRACT:
A process for forming holes with precisely controlled dimension and position in monocrystalline silicon wafers wherein the holes are fabricated with vertical sides. In the preferred process, both sides of the silicon body are masked, opposite registered openings made in the masking layers, an impurity introduced through the openings into the body forming low resistivity regions, the body anodically etched through the openings until a porous silicon region is formed completely through the body, and subsequently removing the resultant porous silicon region with a silicon etchant.

REFERENCES:
patent: 3418226 (1968-12-01), Marinace
patent: 3616348 (1968-06-01), Greig
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3640807 (1972-02-01), Van Dijk
patent: 3648131 (1972-03-01), Stuby
patent: 3661741 (1972-05-01), Meek
patent: 3713922 (1973-01-01), Lepselter et al.

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