Coating processes – Electrical product produced – Condenser or capacitor
Patent
1985-03-04
1987-06-16
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
427 91, H01L 21285
Patent
active
046735933
ABSTRACT:
A semiconductor device having an ohmic electrode which has formed on the surface of a p-type III-V compound semiconductor an assembly of a first Ti layer, a second Zn layer, a third metal layer made of one element selected from among Pt, Mo, W and Cr, and a fourth Au layer is disclosed. A process for producing such semiconductor device is also disclosed.
The present invention provides a novel ohmic electrode having a low contact resistance comparable to that of a conventional electrode formed by deposition of successive Au, Zn and Au layers. The novel electrode also has the advantage of another conventional electrode wherein the Au electromigration is held to a minimum by forming an assembly of a Ti layer, a metal layer made of an element selected from among Pt, Mo, W and Cr, and an Au layer.
REFERENCES:
patent: 3987480 (1976-10-01), Diguet
patent: 4395727 (1983-07-01), Lauterbach
patent: 4414561 (1983-11-01), Keramidas
patent: 4471005 (1984-09-01), Cheng
patent: 4510514 (1985-04-01), Camlibel
Su et al, "Low Contact Resistance Nonalloyed Ohmic Contacts to Zn-implanted p.sup.+ GaAs", Electronic Letters, vol. 19, (1983), Oct., pp. 891-892.
Smith John D.
Sumitomo Electric Industries Ltd.
LandOfFree
Process for forming an ohmic electrode on a p-type III-V compoun does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming an ohmic electrode on a p-type III-V compoun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming an ohmic electrode on a p-type III-V compoun will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-683301