Fishing – trapping – and vermin destroying
Patent
1993-04-05
1994-10-18
Thomas, Tom
Fishing, trapping, and vermin destroying
437246, 437201, 437 40, 437200, 437196, H01L 2144, H01L 2148
Patent
active
053568338
ABSTRACT:
The present invention includes a process for forming an intermetallic layer over a semiconductor substrate and a device formed by the process. The intermetallic layer includes a material having a molecular formula of AB.sub.3, wherein A is an element having an atomic number of 39-41 or 57-73 and B is an element having an atomic of 45, 46, 77, or 78. In one process, an intermetallic member is formed by forming a patterned layer including the A or B element over a substrate, depositing a layer of the other element, and reacting them. The process forms a self-aligned member. Chemical-mechanical polishing, ion milling, and a lift-off method may be performed to pattern an AB.sub.3 intermetallic layer. In a device, an intermetallic member may act as a gate electrode, an electrode of a capacitor, a conductive spacer, an interconnect, or a contact or via plug. An almost endless number of devices may be formed with the intermetallic members.
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Maniar Papu D.
Pintchovski Faivel S.
Gurley L.
Meyer George R.
Motorola Inc.
Thomas Tom
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