Fishing – trapping – and vermin destroying
Patent
1989-04-21
1990-02-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
357 44, 357 48, 357 47, H01L 2702
Patent
active
048988367
ABSTRACT:
In this process P+ type regions are diffused on a substrate of N type semiconductor meterial, said regions forming the horizontal isolation region of the NPN transistors and the low-resistivity collector region of the PNP transistors. Within each isolation region a high-concentration N+ type zone is created that acts as a low-resistivity collector region for the NPN transistors. An N type epitaxial layer is then grown over the whole surface of the device. The completion of the device is carried out in such a way to ensure that the low-concentration collector thickness of transistors NPN be practically equal to the low-concentration collector thickness of transistors PNP.
REFERENCES:
patent: 3079287 (1963-02-01), Anderson
patent: 3702428 (1972-11-01), Schmitz
patent: 3793088 (1974-02-01), Eckton
patent: 3930909 (1976-01-01), Schmitz
patent: 3956035 (1976-05-01), Hermann
patent: 3971059 (1976-07-01), Dunkley
patent: 4038680 (1977-07-01), Yagi
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"Designing A Micro Electronic Diferential Amplifier", Electron Products, pp. 34-37, Jul. 1962.
Musumeci Salvatore
Zambrano Raffaele
Dubno Herbert
Gutiervez Anthony
Hearn Brian E.
SGS--Thomson Microelectronics S.r.l.
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