Process for forming an electrical interconnection system on a se

Details Process for forming an electrical interconnection system on a se Process for forming an electrical interconnection system on a se

1982-04-30

1985-04-02

Kaplan, G. L.

Metal working

Method of mechanical manufacture

Electrical device making

156653, 156657, 1566591, 204192EC, 204192E, 427 89, C23C 1500, H01L 21443

Patent

active

045078513

ABSTRACT:
Disclosed is a process for depositing a metal film on a silicon oxide or silicon nitride surface. This process provides an extremely adherent metallic film and is resistant to interdiffusion between the semiconductor, the insulator, and the metal. The process includes forming contact openings through an insulating layer to a silicon substrate; sputter etching the insulating layer and exposed substrate; depositing layers of platinum, a barrier metal and a conducting metal; and heating to form platinum silicide in the contact openings. The process is useful in forming an electrical interconnection system on a semiconductor device.

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Cuomo et al., Substrate Cleaning by Low Energy Bombardment, IBM Technical Disclosure Bulletin, vol. 10, No. 4, Sep. 1967, pp. 352-353.
Brian Chapman, Glow Discharge Processes, John Wiley & Sons, New York, 1980, pp. 253-255.
J. M. Poate et al., Thin Films-Interdiffusions and Reactions, John Wiley & Sons, New York, 1978, pp. 359-405.

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