Process for forming aluminum alloy thin film

Details Process for forming aluminum alloy thin film Process for forming aluminum alloy thin film

1992-07-09

1996-04-30

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437197, 437198, H01L 2144

Patent

active

055125158

ABSTRACT:
A process comprising the steps of introducing an organic aluminum compound,including at least one of trialkylaluminum and dialkylhydriroaluminum, a copper chelate compound and a silane compound having one to three silicon atoms in the form of a gas mixture into a reactor holding a substrate heated to 250.degree. to 400.degree. C., forming an aluminum alloy thin film containing 0 to 5% copper and 0.1 to 2% silicon on the aforementioned substrate, and heat-treating the substrate formed with the aluminum thin film in an inert gas or hydrogen atmosphere at 400.degree. to 450.degree. C. In application of the present invention to a wiring technique of the semiconductor integrated circuit, it is possible to form a metallic thin film capable of completely smoothing a contact hole having a high aspect ratio.

REFERENCES:
patent: 4502207 (1985-03-01), Ohshima et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5208187 (1993-05-01), Tsubouchi et al.
patent: 5238874 (1993-08-01), Yamada

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