Process for forming a trench device isolation region on a semico

Details Process for forming a trench device isolation region on a semico Process for forming a trench device isolation region on a semico

1998-07-13

2000-05-09

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438221, H01L 2176

Patent

active

060603712

ABSTRACT:
A process for manufacturing a semiconductor device including: forming a mask having a pattern for forming a trench on a semiconductor substrate; forming a film having substantially the same etch rate as the semiconductor substrate on the resulting semiconductor substrate; forming a trench having an inclined sidewall by simultaneously etching the film and a trench formation region on the semiconductor substrate; and embedding an insulating material in the trench thereby to form a device isolation region.

REFERENCES:
patent: 5753561 (1998-05-01), Lee et al.
patent: 5811347 (1998-09-01), Gardner et al.

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