Process for forming a thin oxide layer

Details Process for forming a thin oxide layer Process for forming a thin oxide layer

1991-12-17

1993-09-14

Fourson, George

Fishing, trapping, and vermin destroying

437983, 148DIG118, H01L 21316

Patent

active

052448436

ABSTRACT:
A novel process for forming a robust, sub-100 .ANG. oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 .ANG.. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 .ANG.. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 .ANG., a composite oxide stack is used which comprises 40-90 .ANG. of pad oxide formed using the above novel process, and 60-200 .ANG. of deposited oxide.

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