Process for forming a thin microcrystalline silicon semiconducto

Details Process for forming a thin microcrystalline silicon semiconducto Process for forming a thin microcrystalline silicon semiconducto

1996-02-22

1997-10-14

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136249, 136258, 257 53, 257 64, 257440, 257458, 427578, 437 4, 437 99, 437101, 437113, 437233, H01L 3120

Patent

active

056772360

ABSTRACT:
A thin microcrystalline silicon semiconductor film suitable for use as an intrinsic semiconductor layer in an amorphous silicon solar cell or the like. The thin microcrystalline silicon semiconductor film comprises an amorphous phase with crystallites contained therein in the form of a prismatic or conical crystallite aggregate phase. Additional crystallites may be dispersed as individual crystallites in the amorphous phase. In the thin film, the crystalline fraction may preferably range from 5 to 80% and the crystallite size may preferably range from 2 to 1,000 nm. This thin film can be formed by first forming an initial film to a thickness in a range of from 2 nm to 100 nm at a deposition rate of from 0.01 nm/sec to 0.1 nm/sec on a substrate and then forming a principal film at a deposition rate of from 0.1 nm/sec to 2 nm/sec, for example, in accordance with RF plasma CVD.

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