Process for forming a thin metal film by chemical vapor depositi

Details Process for forming a thin metal film by chemical vapor depositi Process for forming a thin metal film by chemical vapor depositi

1993-07-21

1994-04-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437245, 437187, 437189, 427124, 4272551, H01L 21285

Patent

active

053066669

ABSTRACT:
When a thin metal film is formed on a substrate at a constant substrate temperature by chemical vapor deposition while alternately and discontinuously introducing a raw material gas and a reducing gas onto the substrate, reducing the raw material gas with the reducing gas on the substrate, thereby conducting chemical vapor deposition, and repeating the chemical vapor deposition to obtain a desired film thickness, a thin metal film having a good surface flatness without any current leakage can be obtained without etching the substrate wafer, and when the reducing gas is excited to excited species by an exciting means at the introduction of the reducing gas and the excited species is used be reduce the raw material gas, a lower substrate temperature can be used and chemical vapor deposition process time can be made shorter than without using the exciting means.

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Creighton, J. R., "A Mechanism for Selectivity Loss During Tungsten CVBD", J. Electro Chem. Soc., vol. 136, No. 1, Jan. 1989, pp. 271-275.

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