Process for forming a shallow trench isolation structure

Details Process for forming a shallow trench isolation structure Process for forming a shallow trench isolation structure

2000-01-26

2000-11-14

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438695, H01L 2176

Patent

active

061469718

ABSTRACT:
A method is used to form a shallow trench isolation structure. According to the invention, prior to performing CMP on a HDPCVD oxide layer, a smoothing step is performed on the HDPCVD oxide layer to smooth the peak profile of the oxide layer to reduce the moment resulting from the CMP on the peak, and to prevent the later-formed shallow trench isolation structure from being pulled out. In addition, since the invention prevents the later-formed shallow trench isolation structure from being pulled out, the particles resulting from the oxide pulled out from the shallow trench are reduced. Thus, particle damage to the surface of the wafer is reduced.

REFERENCES:
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5880007 (1999-03-01), Varian et al.
patent: 5981355 (1999-11-01), Lee
patent: 5998279 (1999-12-01), Liaw

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