Process for forming a semiconductor device with controlled relat

Details Process for forming a semiconductor device with controlled relat Process for forming a semiconductor device with controlled relat

1997-12-19

2000-06-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

438 18, H01L 2166

Patent

active

060717491

ABSTRACT:
In a semiconductor device fabrication process, a first semiconductor device is constructed with a gate electrode and an active (e.g., source/drain) region. The thickness of the active region is determined. A second semiconductor device is constructed with the same gate electrode and active region dopant concentrations as the first device and is generally the same as the first device except for the thickness of the gate electrode. Using the determined thickness of the active region of the first device, the thickness of the gate electrode of the second device is controlled so that it differs from the thickness of the active region of the second device by a desired amount.

REFERENCES:
patent: 4672314 (1987-06-01), Kokkas
patent: 4978627 (1990-12-01), Liu et al.
patent: 5252508 (1993-10-01), Masuda
patent: 5863807 (1999-01-01), Jang et al.

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