Process for forming a semiconductor device having a metal-semico

Details Process for forming a semiconductor device having a metal-semico Process for forming a semiconductor device having a metal-semico

1995-05-19

1996-08-13

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437200, 437241, H01L 21283

Patent

active

055455743

ABSTRACT:
A metal-semiconductor compound (72, 74, 76) is formed after a step that introduces nitrogen into regions (52, 54, 56) of the device (100). In one embodiment, a nitrogen-containing gas is exposed to surfaces (42, 44, 46) before forming a titanium layer (62) is deposited. A one-step anneal is performed to form titanium disilicide regions (72, 72, 76) that are in the C54 phase without thermal agglomeration or forming electrical shorts between the titanium disilicide regions (72, 74, 76).

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